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International Rectifier Electronic Components Datasheet

FB180SA10 Datasheet

Power MOSFET

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l Fully Isolated Package
l Easy to Use and Parallel
l Very Low On-Resistance
l Dynamic dv/dt Rating
l Fully Avalanche Rated
l Simple Drive Requirements
l Low Drain to Case Capacitance
l Low Internal Inductance
G
Description
Fifth Generation, high current density HEXFETS are
paralled into a compact, high power module providing
the best combination of switching, ruggedized design,
very low ON resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial - industrial applications at power
dissipation levels to approximately 500 watts. The low
thermal resistance and easy connection to the SOT-
227 package contribute to its universal acceptance
throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
VISO
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Insulation Withstand Voltage (AC-RMS)
Mounting torque, M4 srew
Thermal Resistance
RqJC
RqCS
1
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
PD- 91651C
FB180SA10
HEXFET® Power MOSFET
D VDSS = 100V
RDS(on) = 0.0065W
ID = 180A
S
S O T -22 7
Max.
180
120
720
480
2.7
± 20
700
180
48
5.7
-55 to + 150
2.5
1.3
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
kV
N•m
Typ.
–––
0.05
Max.
Units
0.26
––– °C/W
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2/1/99


International Rectifier Electronic Components Datasheet

FB180SA10 Datasheet

Power MOSFET

No Preview Available !

FB180SA10
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ls
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.093 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.0065 W VGS = 10V, ID = 108A „
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
93 ––– ––– S VDS = 25V, ID = 108A
––– ––– 50
––– ––– 500
µA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
––– 250 380
ID = 180A
––– 40 60 nC VDS = 80V
––– 110 165
VGS = 10.0V, See Fig. 6 and 13 „
––– 45 –––
VDD = 50V
––– 351 ––– ns ID = 180A
––– 181 –––
RG = 2.0W (Internal)
––– 335 –––
RD = 0.27W, See Fig. 10 „
––– 5.0 ––– nH Between lead,
and center of die contact
––– 10700 –––
VGS = 0V
––– 2800 ––– pF VDS = 25V
––– 1300 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 180 A showing the
integral reverse
––– ––– 720
p-n junction diode.
––– ––– 1.3 V TJ = 25°C, IS = 180A, VGS = 0V „
––– 300 450
––– 2.6 3.9
ns TJ = 25°C, IF = 180A
µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L =43µH
RG = 25W , IAS = 180A. (See Figure 12)
ƒ ISD £ 180A, di/dt £83A/µs, VDD £ V(BR)DSS,
TJ £ 150°C
„ Pulse width £ 300µs; duty cycle £ 2%.
2 www.irf.com


Part Number FB180SA10
Description Power MOSFET
Maker International Rectifier
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