FB180SA10 mosfet equivalent, power mosfet.
4 38.3 0 ( 1.5 08 ) 37.8 0 ( 1.4 88 ) -A 3 6 .25 ( .246 ) 12.5 0 ( .49 2 ) 25 .7 0 ( 1 .012 ) 25 .2 0 ( .9 92 ) -B 1 7 .50 ( .295 ) 3 0.2 0 ( 1.18 9 ) 2 9.8 0 ( 1.17 3 ) .
at power dissipation levels to approximately 500 watts. The low thermal resistance and easy connection to the SOT227 pac.
Fifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness. The isolated SOT-227 package is preferred for.
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