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International Rectifier Electronic Components Datasheet

FU9024N Datasheet

IRFU9024N

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PRELIMINARY
l Ultra Low On-Resistance
l P-Channel
l Surface Mount (IRFR9024N)
l Straight Lead (IRFU9024N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
www.DatauSthileizeet4Ua.dcvoamnced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
G
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
PD - 9.1506
IRFR/U9024N
HEXFET® Power MOSFET
D
VDSS = -55V
RDS(on) = 0.175
ID = -11A
S
D-Pak
TO -252A A
I-Pak
TO -2 5 1 AA
Max.
-11
-8
-44
38
0.30
± 20
62
-6.6
3.8
-10
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
3.3
50
110
Units
°C/W
6/26/97


International Rectifier Electronic Components Datasheet

FU9024N Datasheet

IRFU9024N

No Preview Available !

IRFR/U9024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
Qg Total Gate Charge
Qgs Gate-to-Source Charge
www.DataSQhegdet4U.com Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-55 ––– ––– V VGS = 0V, ID = -250µA
––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.175 VGS = -10V, ID = -6.6A „
-2.0 ––– -4.0 V VDS = VGS, ID = -250µA
2.5 ––– ––– S VDS = -25V, ID = -7.2A†
––– ––– -25 µA VDS = -55V, VGS = 0V
––– ––– -250
VDS = -44V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 19
ID = -7.2A
––– ––– 5.1
––– ––– 10
nC VDS = -44V
VGS = -10V, See Fig. 6 and 13 „†
––– 13 –––
VDD = -28V
––– 55 ––– ns ID = -7.2A
––– 23 –––
RG = 24
––– 37 –––
RD = 3.7Ω, See Fig. 10 „†
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
from package
G
––– 7.5 –––
and center of die contact…
D
S
––– 350 –––
VGS = 0V
––– 170 ––– pF VDS = -25V
––– 92 –––
ƒ = 1.0MHz, See Fig. 5†
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -11
––– ––– -44
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– -1.6 V TJ = 25°C, IS = -7.2A, VGS = 0V „
––– 47 71 ns TJ = 25°C, IF = -7.2A
––– 84 130 nC di/dt = 100A/µs „†
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 2.8mH
RG = 25, IAS = -6.6A. (See Figure 12)
ƒ ISD -6.6A, di/dt 240A/µs, VDD V(BR)DSS,
TJ 150°C
„ Pulse width 300µs; duty cycle 2%.
…This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
† Uses IRF9Z24N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994


Part Number FU9024N
Description IRFU9024N
Maker International Rectifier
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FU9024N Datasheet PDF






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