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International Rectifier Electronic Components Datasheet

G4BC20U Datasheet

IRG4BC20U

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PD - 91448D
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20U
UltraFast Speed IGBT
Features
• UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
C
G
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
VCES = 600V
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.5A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220AB
Max.
600
13
6.5
52
52
± 20
5.0
60
24
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.50
–––
2.0 (0.07)
Max.
2.1
–––
80
–––
Units
°C/W
g (oz)
1
4/17/2000


International Rectifier Electronic Components Datasheet

G4BC20U Datasheet

IRG4BC20U

No Preview Available !

IRG4BC20U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600
V(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
0.69
1.85
2.1
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 6.5A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance U
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
2.27 V IC = 13A
See Fig.2, 5
1.87
IC = 6.5A , TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
-11 mV/°C VCE = VGE, IC = 250µA
1.4 4.3 S VCE = 100V, IC = 6.5A
— — 250 µ A VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— — ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ. Max.
27 41
4.5 6.8
10 16
21
13
86 130
120 180
0.10
0.12
0.22 0.4
20
14
190
140
0.42
7.5
530
39
7.4
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC = 6.5A
VCC = 400V
VGE = 15V
See Fig. 8
TJ = 25°C
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail"
See Fig. 10, 11, 13, 14
TJ = 150°C,
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail"
See Fig. 13, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
2
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
www.irf.com


Part Number G4BC20U
Description IRG4BC20U
Maker International Rectifier
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G4BC20U Datasheet PDF






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