G4BC20U - IRG4BC20U

Features

UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-220AB package C G E n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for specified.

G4BC20U irg4bc20u by International Rectifier - Datasheet Preview

Datasheet Details

Part number	G4BC20U
Manufacturer	International Rectifier (now Infineon)
File Size	164.88 KB
Description	IRG4BC20U
Datasheet	G4BC20U Datasheet

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Full PDF Text Transcription

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PD - 91448D INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20U UltraFast Speed IGBT Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C G E n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs VCES = 600V VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.

Published: Dec 10, 2014 |