IRG4BC20U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600
V(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —
—
—
—
0.69
1.85
—
—
—
2.1
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 6.5A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance U
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
— 2.27 — V IC = 13A
See Fig.2, 5
— 1.87 —
IC = 6.5A , TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
— -11 — mV/°C VCE = VGE, IC = 250µA
1.4 4.3 — S VCE = 100V, IC = 6.5A
— — 250 µ A VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— — ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max.
27 41
4.5 6.8
10 16
21 —
13 —
86 130
120 180
0.10 —
0.12 —
0.22 0.4
20 —
14 —
190 —
140 —
0.42 —
7.5 —
530 —
39 —
7.4 —
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC = 6.5A
VCC = 400V
VGE = 15V
See Fig. 8
TJ = 25°C
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
See Fig. 10, 11, 13, 14
TJ = 150°C,
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
See Fig. 13, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
2
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
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