G4BC30FD - IRG4BC30FD

Datasheet Summary

Features

C.
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than G Generation 3.
IGBT co-packaged with.

International Rectifier

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Datasheet Details

Part number	G4BC30FD
Manufacturer	International Rectifier
File Size	402.05 KB
Description	IRG4BC30FD
Datasheet	G4BC30FD Datasheet
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PD -91451B IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than G Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in E n-channel bridge configurations • Industry standard TO-220AB package Benefits • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's .

Published: Dec 15, 2015 |