G4BC30FD
Features
- Fast: Optimized for medium operating frequencies ( 1-5 k Hz in hard switching, >20 k Hz in resonant mode).
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
Generation 3
- IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in
E n-channel bridge configurations
- Industry standard TO-220AB package
Benefits
- Generation -4 IGBT's offer highest efficiencies available
- IGBT's optimized for specific application conditions
- HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require less/no snubbing
- Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Fast Co Pack IGBT VCES = 600V
VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A
TO-220AB
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter...
