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International Rectifier Electronic Components Datasheet

G4BH20K-L Datasheet

IRG4BH20K-L

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PD -93961
IRG4BH20K-L
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
• Industry standard TO-262 package
Benefits
• As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBT's offer highest power
density motor controls possible
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
VCES = 1200V
VCE(on) typ. = 3.17V
@VGE = 15V, IC = 5.0A
TO-262
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Max.
1200
11
5.0
22
22
10
±20
130
60
24
-55 to +150
Units
V
A
µs
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
2.1
–––
40
–––
Units
°C/W
g (oz)
1
8/17/00


International Rectifier Electronic Components Datasheet

G4BH20K-L Datasheet

IRG4BH20K-L

No Preview Available !

IRG4BH20K-L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 —
V(BR)ECS
Emitter-to-Collector Breakdown Voltage „ 18 —
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 1.13
— 3.17
4.3
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 2.5mA
IC = 5.0A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance …
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
— 4.04 — V IC = 11A
See Fig.2, 5
— 2.84 —
IC = 5.0A , TJ = 150°C
3.5 — 6.5
VCE = VGE, IC = 250µA
— -10 — mV/°C VCE = VGE, IC = 1mA
2.3 3.5 — S VCE = 100 V, IC = 5.0A
— — 250 µA VGE = 0V, VCE = 1200V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 1200V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
— 28 43
IC = 5.0A
Qge Gate - Emitter Charge (turn-on)
— 4.4 6.6 nC VCC = 400V
See Fig.8
Qgc
Gate - Collector Charge (turn-on)
— 12 18
VGE = 15V
td(on)
Turn-On Delay Time
— 23 —
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
— 26 — ns TJ = 25°C
— 93 140
IC =5.0A, VCC = 960V
— 270 400
VGE = 15V, RG = 50
Eon Turn-On Switching Loss
— 0.45 —
Energy losses include "tail"
Eoff Turn-Off Switching Loss
— 0.44 — mJ See Fig. 9,10,14
Ets Total Switching Loss
— 0.89 1.2
tsc Short Circuit Withstand Time
10 — —
µs VCC = 720V, TJ = 125°C
VGE = 15V, RG = 50
td(on)
Turn-On Delay Time
— 23 —
TJ = 150°C,
tr
td(off)
Rise Time
Turn-Off Delay Time
— 28 —
— 100 —
ns
IC = 5.0A, VCC = 960V
VGE = 15V, RG = 50
tf Fall Time
— 620 —
Energy losses include "tail"
Ets Total Switching Loss
— 1.7 — mJ See Fig. 10,11,14
LE Internal Emitter Inductance
— 7.5 — nH Measured 5mm from package
Cies Input Capacitance
— 435 —
VGE = 0V
Coes Output Capacitance
— 44 — pF VCC = 30V
See Fig. 7
Cres Reverse Transfer Capacitance
— 8.3 —
ƒ = 1.0MHz
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG =50,
(See fig. 13a)
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
2 www.irf.com


Part Number G4BH20K-L
Description IRG4BH20K-L
Maker International Rectifier
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