G4BH20K-L - IRG4BH20K-L

Datasheet Summary

Features

High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V.
Combines low conduction losses with high switching speed.
Latest generation design provides tighter parameter distribution and higher efficiency than previous generations.
Industry standard TO-262 package Benefits.
As a Freewheeling Diode we recommend our.

International Rectifier

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Datasheet Details

Part number	G4BH20K-L
Manufacturer	International Rectifier
File Size	163.86 KB
Description	IRG4BH20K-L
Datasheet	G4BH20K-L Datasheet
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Full PDF Text Transcription

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PD -93961 IRG4BH20K-L INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations • Industry standard TO-262 package Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBT's offer highest power density motor controls possible C G E n-channel Short Circuit Rated UltraFast IGBT VCES = 1200V VCE(on) typ. = 3.17V @VGE = 15V, IC = 5.

Published: Feb 27, 2015 |