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G4PH30KD - IRG4PH30KD

Key Features

  • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V.
  • Combines low conduction losses with high switching speed.
  • Tighter parameter distribution and higher efficiency than previous generations.
  • IGBT co-packaged with.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
G4PH40UD IRG4PH40UD
G4PH40UD2-E IRG4PH40UD2-E
G4PH50KD IRG4PH50KD
G4PH50UD IRG4PH50UD
G4PC30F INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD- 91579A IRG4PH30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes C Short Circuit Rated UltraFast IGBT VCES = 1200V G E VCE(on) typ. = 3.10V @VGE = 15V, IC = 10A n-ch an nel Benefits • Latest generation 4 IGBT's offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs.