Click to expand full text
PD - 91682A
IRG4PSC71UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations
• IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations
• Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247
• Creepage distance increased to 5.35mm
C
G E
n-channel
VCES = 600V VCE(on) typ. = 1.
G4PSC71UD Datasheet
