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International Rectifier Electronic Components Datasheet

G4PSC71UD Datasheet

IRG4PSC71UD

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PD - 91682A
IRG4PSC71UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
• IGBT co-packaged with HEXFRED ultrafast, ultrasoft
recovery anti-parallel diodes for use in bridge
configurations
• Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
• Creepage distance increased to 5.35mm
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.67V
@VGE = 15V, IC = 60A
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• Maximum power density, twice the power
handling of TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBTs
• Cost and space saving in designs that require
multiple, paralleled IGBTs
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance\ Mechanical
RθJC
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
SUPER - 247
Max.
600
85…
60
200
200
60
350
± 20
350
140
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
20.0(2.0)
–––
Typ.
–––
–––
0.24
–––
–––
6 (0.21)
Max.
0.36
0.69
–––
38
–––
–––
Units
°C/W
N (kgf)
g (oz)
1
5/12/99


International Rectifier Electronic Components Datasheet

G4PSC71UD Datasheet

IRG4PSC71UD

No Preview Available !

IRG4PSC71UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
600
–––
–––
–––
–––
VGE(th)
Gate Threshold Voltage
3.0
VGE(th)/TJ Temperature Coeff. of Threshold Voltage –––
gfe Forward Transconductance „
47
ICES Zero Gate Voltage Collector Current –––
–––
VFM Diode Forward Voltage Drop
–––
–––
IGES Gate-to-Emitter Leakage Current –––
––– ––– V
0.39 ––– V/°C
1.67 2.0
1.95 –––
1.71 ––– V
––– 6.0
-13 ––– mV/°C
70 ––– S
––– 500 µA
––– 13 mA
1.4 1.7
V
1.3 –––
––– ±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 10mA
IC = 60A
VGE = 15V
IC = 100A
See Fig. 2, 5
IC = 60A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 1.5mA
VCE = 50V, IC = 60A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 60A
See Fig. 13
IC = 60A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
During tb
2
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
––– 340 520
––– 44 66
––– 160 240
––– 90 –––
––– 94 –––
––– 245 368
––– 110 167
––– 3.26 –––
––– 2.27 –––
––– 5.53 7.2
––– 91 –––
––– 88 –––
––– 353 –––
––– 150 –––
––– 7.1 –––
––– 13 –––
––– 7500 –––
––– 720 –––
––– 93 –––
––– 82 120
––– 140 210
––– 8.2 12
––– 13 20
––– 364 546
––– 1084 1625
––– 328 –––
––– 266 –––
nC
ns
mJ
ns
mJ
nH
pF
ns
A
nC
A/µs
IC = 60A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 60A, VCC = 480V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
TJ = 150°C, See Fig. 9, 10, 11, 18
IC = 60A, VCC = 480V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
IF = 60A
TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C
16 di/dt = 200A/µs
TJ = 25°C See Fig.
TJ = 125°C
17
www.irf.com


Part Number G4PSC71UD
Description IRG4PSC71UD
Maker International Rectifier
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G4PSC71UD Datasheet PDF






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