G4PSC71UD Datasheet | International Rectifier

Features - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations - IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations - Industry-benchmark Super-247 package with higher power handling capability pared to same footprint TO-247 - Creepage distance increased to 5.35mm G E n-channel VCES = 600V VCE(on) typ. = 1.67V @VGE = 15V, IC = 60A Benefits - Generation 4 IGBT's offer highest efficiencies available - Maximum power density, twice the power handling of TO-247, less space than TO-264 - IGBTs optimized for specific application conditions - HEXFRED diodes optimized for performance with IGBTs - Cost and space saving in designs that require multiple, paralleled IGBTs Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Thermal Resistance Mechanical RθJC RθJC RθCS RθJA .irf. Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Remended Clip Force Weight SUPER - 247 Max. 600 85… 60 200 200 60 350 ± 20 350 140 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V V W °C Min. - - - - - - - - - - - -...