G4PSC71UD
Key Features
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations
- IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations
- Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247
- Creepage distance increased to 5.35mm C G E n-channel VCES = 600V VCE(on) typ. = 1.67V @VGE = 15V, IC = 60A Benefits
- Generation 4 IGBT's offer highest efficiencies available
- Maximum power density, twice the power handling of TO-247, less space than TO-264
- IGBTs optimized for specific application conditions
- HEXFRED diodes optimized for performance with IGBTs
- Cost and space saving in designs that require multiple, paralleled IGBTs
