G7S313U Datasheet | International Rectifier

Features Key Parameters l Advanced Trench IGBT Technology VCE min V l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A V circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency IRP max @ TC= 25°C TJ max °C l High repetitive peak current capability l Lead Free package E n-channel G Gate D2Pak IRG7S313UPb F C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features bine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V c Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Thermal Resistance Parameter RθJC d Junction-to-Case Max. ±30 40 20 160 78 31 0.63 -40 to + 150 Typ. - - - Max. 1.6 Units V A W W/°C °C Units...