G7S313UPBF - IRG7S313UPBF

Description

This IGBT is specifically designed for applications in Plasma Display Panels.

This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

Features

l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP.

International Rectifier

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Datasheet Details

Part number	G7S313UPBF
Manufacturer	International Rectifier
File Size	266.48 KB
Description	IRG7S313UPBF
Datasheet	G7S313UPBF Datasheet
Additional preview pages of the G7S313UPBF datasheet.

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G7S313U - IGBT

Full PDF Text Transcription

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PD - 97402A PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRG7S313UPbF Key Parameters 330 1.35 160 150 V V A °C VCE min VCE(ON) typ. @ IC = 20A IRP max @ TC= 25°C TJ max C G E G C E n-channel G Gate C Collector D2Pak IRG7S313UPbF E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

Published: Feb 7, 2014 |