G7S313U - IGBT

This page provides the datasheet information for the G7S313U, a member of the G7S313UPBF IGBT family.

Description

This IGBT is specifically designed for applications in Plasma Display Panels.

This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

Features

Key Parameters l Advanced Trench IGBT Technology VCE min 330 V l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.35 V circuits in PDP.

International Rectifier

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Datasheet Details

Part number	G7S313U
Manufacturer	International Rectifier
File Size	266.48 KB
Description	IGBT
Datasheet	G7S313U Datasheet
Additional preview pages of the G7S313U datasheet.

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G7S313UPBF - IRG7S313UPBF

Full PDF Text Transcription

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PDP TRENCH IGBT PD - 97402A IRG7S313UPbF Features Key Parameters l Advanced Trench IGBT Technology VCE min 330 V l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.35 V circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency IRP max @ TC= 25°C TJ max 160 A 150 °C l High repetitive peak current capability l Lead Free package C G E n-channel G Gate E C G D2Pak IRG7S313UPbF C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

Published: Dec 22, 2021 |