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International Rectifier Electronic Components Datasheet

GA100NA60U Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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PD - 94290
INSULATED GATE BIPOLAR TRANSISTOR
GA100NA60U
Ultra-FastTM Speed IGBT
Features
• UltraFastTM: Optimized for minimum saturation
voltage and operating frequencies up to 40 kHz in
hard switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolated package (2,500 Volt AC/RMS)
• Very low internal inductance (5 nH typ.)
• Industry standard outline
2
Benefits
• Designed for increased operating efficiency in power
conversion: PFC, UPS, SMPS, Welding, Induction heating
• Lower overall losses available at frequencies 20kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current‚
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
3
VCES = 600V
1 VCE(on) typ. = 1.49V
@VGE = 15V, IC = 50A
4
SOT-227
Max.
600
100
50
200
200
± 20
2500
250
100
-55 to + 150
-55 to + 150
12 lbf •in(1.3N•m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
Wt
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Junction-to-Case, IGBT
Thermal Resistance, Junction-to-Case , Diode
Case-to-Sink, Flat, Greased Surface
Weight of Module
Typ.
–––
–––
0.05
30
Max.
0.50
1.0
–––
–––
Units
°C/W
gm
1
7/27/01
Datasheet pdf - http://www.DataSheet4U.net/


International Rectifier Electronic Components Datasheet

GA100NA60U Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

www.DataSheet.co.kr
GA100NA60U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Parameter
Collector-to-Emitter Breakdown VoltageŽ
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance 
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Min. Typ. Max. Units
600 — — V
— 0.36 — V/°C
— 1.49 2.1
— 1.80 — V
— 1.47 —
3.0 — 6.0
— -7.6 — mV/°C
34 52 — S
— — 250 µA
— — 1.3 mA
— 1.3 1.6 V
— 1.16 1.3
— — ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 50A
IC = 100A
VGE = 15V
See Fig. 1, 4
IC = 50A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 50A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 50A
See Fig. 12
IC = 50A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 430 640
IC = 50A
— 48 72 nC VCC = 400V
See Fig. 7
— 130 190
––– 57 –––
VGE = 15V
TJ = 25°C
––– 80 –––
––– 240 —
ns IC = 60A, VCC = 480V
VGE = 15V, RG = 5.0
––– 120 —
Energy losses include "tail" and
––– 0.41 –––
diode reverse recovery.
––– 2.51 ––– mJ
––– 2.92 4.4
––– 57 –––
––– 80 –––
––– 380 –––
––– 170 –––
TJ = 150°C,
ns IC = 60A, VCC = 480V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
––– 4.78 ––– mJ diode reverse recovery.
— 2.0 — nH
— 7400 —
— 730 —
VGE = 0V
pF VCC = 30V
See Fig. 6
— 90 —
ƒ = 1.0MHz
— 90 140 ns TJ = 25°C See Fig.
— 120 180
— 7.3 11
TJ = 125°C 13
A TJ = 25°C See Fig.
IF = 50A
— 11 16
TJ = 125°C 14
VR = 200V
— 360 550 nC TJ = 25°C See Fig.
— 780 1200
TJ = 125°C
15 di/dt = 200Aµs
— 370 — A/µs TJ = 25°C See Fig.
— 220 —
TJ = 125°C 16
Details of note  through „ are on the page 7
2
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Datasheet pdf - http://www.DataSheet4U.net/


Part Number GA100NA60U
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
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GA100NA60U Datasheet PDF






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