GA100NA60U
GA100NA60U is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
Features
- Ultra Fast TM: Optimized for minimum saturation voltage and operating frequencies up to 40 k Hz in hard switching, > 200 k Hz in resonant mode
- Very low conduction and switching losses
- Fully isolated package (2,500 Volt AC/RMS)
- Very low internal inductance (≤ 5 n H typ.)
- Industry standard outline
2 1
Ultra-Fast TM Speed IGBT
VCES = 600V VCE(on) typ. = 1.49V
@VGE = 15V, IC = 50A
Benefits
- Designed for increased operating efficiency in power conversion: PFC, UPS, SMPS, Welding, Induction heating
- Lower overall losses available at frequencies ≥ 20k Hz
- Easy to assemble and parallel
- Direct mounting to heatsink
- Lower EMI, requires less snubbing
- Plug-in patible with other SOT-227 packages
SOT-227
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE VISOL PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t=1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Mounting Torque, 6-32 or M3 Screw
Max.
600 100 50 200 200 ± 20 2500 250 100 -55 to + 150 -55 to + 150 12 lbf
- in(1.3N- m)
Units
°C
Thermal Resistance
Parameter
RθJC RθJC RθCS Wt Junction-to-Case, IGBT Thermal Resistance, Junction-to-Case , Diode Case-to-Sink, Flat, Greased Surface Weight of Module
Typ.
- -
- -
- - 0.05 30
Max.
0.50 1.0
- -
-...