Download GA100NA60U Datasheet PDF
International Rectifier
GA100NA60U
GA100NA60U is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
Features - Ultra Fast TM: Optimized for minimum saturation voltage and operating frequencies up to 40 k Hz in hard switching, > 200 k Hz in resonant mode - Very low conduction and switching losses - Fully isolated package (2,500 Volt AC/RMS) - Very low internal inductance (≤ 5 n H typ.) - Industry standard outline 2 1 Ultra-Fast TM Speed IGBT VCES = 600V VCE(on) typ. = 1.49V @VGE = 15V, IC = 50A Benefits - Designed for increased operating efficiency in power conversion: PFC, UPS, SMPS, Welding, Induction heating - Lower overall losses available at frequencies ≥ 20k Hz - Easy to assemble and parallel - Direct mounting to heatsink - Lower EMI, requires less snubbing - Plug-in patible with other SOT-227 packages SOT-227 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE VISOL PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current‚ Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t=1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Mounting Torque, 6-32 or M3 Screw Max. 600 100 50 200 200 ± 20 2500 250 100 -55 to + 150 -55 to + 150 12 lbf - in(1.3N- m) Units °C Thermal Resistance Parameter RθJC RθJC RθCS Wt Junction-to-Case, IGBT Thermal Resistance, Junction-to-Case , Diode Case-to-Sink, Flat, Greased Surface Weight of Module Typ. - - - - - - 0.05 30 Max. 0.50 1.0 - - -...