GA100NA60UP Datasheet | Vishay

.DataSheet.co.kr Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A Features - Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode - Very low conduction and switching losses - Fully isolated package (2500 V AC/RMS) - Very low internal inductance ( 5 nH typical) - Industry standard outline - UL approved file E78996 - pliant to RoHS directive 2002/95/EC - Designed and qualified for industrial market SOT-227 BENEFITS PRODUCT SUMMARY VCES IC DC VCE(on) at 100 A, 25 °C 600 V 100 A 1.8 V - Designed for increased operating efficiency in power conversion: PFC, UPS, SMPS,...