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GA100NA60UP - Insulated Gate Bipolar Transistor

Key Features

  • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode.
  • Very low conduction and switching losses.
  • Fully isolated package (2500 V AC/RMS).
  • Very low internal inductance ( 5 nH typical).
  • Industry standard outline.
  • UL approved file E78996.
  • Compliant to RoHS directive 2002/95/EC.
  • Designed and qualified for industrial market SOT-227.

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Datasheet Details

Part number GA100NA60UP
Manufacturer Vishay
File Size 317.22 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet GA100NA60UP Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet.co.kr GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolated package (2500 V AC/RMS) • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial market SOT-227 BENEFITS PRODUCT SUMMARY VCES IC DC VCE(on) at 100 A, 25 °C 600 V 100 A 1.