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GA100NA60U - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • UltraFastTM: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode.
  • Very low conduction and switching losses.
  • Fully isolated package (2,500 Volt AC/RMS).
  • Very low internal inductance (≤ 5 nH typ. ).
  • Industry standard outline 2 1 Ultra-FastTM Speed IGBT 3 VCES = 600V VCE(on) typ. = 1.49V @VGE = 15V, IC = 50A 4 Benefits.
  • Designed for increased operating efficiency in pow.

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www.DataSheet.co.kr PD - 94290 GA100NA60U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFastTM: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolated package (2,500 Volt AC/RMS) • Very low internal inductance (≤ 5 nH typ.) • Industry standard outline 2 1 Ultra-FastTM Speed IGBT 3 VCES = 600V VCE(on) typ. = 1.