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International Rectifier Electronic Components Datasheet

GA200SA60S Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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PD- 50070A
INSULATED GATE BIPOLAR TRANSISTOR
/) 5)$5
Standard Speed IGBT
Features
Standard : Optimized for minimum saturation
voltage and low operating frequencies up to 1kHz
Lowest conduction losses available
Fully isolated package ( 2,500 volt AC)
Very low internal inductance ( 5 nH typ.)
Industry standard outline
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 100A
Benefits
Designed for increased operating efficiency in power
conversion: UPS, SMPS, Welding, Induction heating
Easy to assemble and parallel
Direct mounting to heatsink
Plug-in compatible with other SOT-227 packages
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
S O T -2 2 7
Max.
600
200
100
400
400
± 20
155
2500
630
250
-55 to + 150
-55 to + 150
12 lbf •in(1.3N•m)
Thermal Resistance
RθJC
RθCS
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Weight of Module
www.irf.com
Typ.
–––
0.05
30
Max.
0.20
–––
–––
Units
V
A
V
mJ
V
W
°C
Units
°C/W
gm
1
4/24/2000


International Rectifier Electronic Components Datasheet

GA200SA60S Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

GA200SA60S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — —
V(BR)ECS Emitter-to-Collector Breakdown Voltage T 18 — —
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.62
1.10 1.3
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 100A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance U
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
1.33 V IC = 200A
See Fig.2, 5
1.02
IC = 100A , TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
-10 mV/°C VCE = VGE, IC = 2 mA
90 150 S VCE = 100V, IC = 100A
— — 1.0 mA VGE = 0V, VCE = 600V
— — 10
VGE = 0V, VCE = 10V, TJ = 150°C
— — ±250 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Min.
Typ. Max.
770 1200
100 150
260 380
78
56
890 1300
390 580
0.98
17.4
18.4 25.5
72
60
1500
660
35.7
5.0
Units
nC
ns
mJ
ns
mJ
nH
Conditions
IC = 100A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 100A, VCC = 480V
VGE = 15V, RG = 2.0
Energy losses include "tail"
See Fig. 9, 10, 13
TJ = 150°C,
IC = 100A, VCC = 480V
VGE = 15V, RG = 2.0
Energy losses include "tail"
See Fig. 10,11, 13
Between lead,
and center of the die contact
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
16250
1040
190
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 15 )
T Pulse width 80µs; duty factor 0.1%.
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 2.0,
(See fig. 14)
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
2 www.irf.com


Part Number GA200SA60S
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
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GA200SA60S Datasheet PDF






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