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GA200SA60U - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode.
  • Very low conduction and switching losses.
  • Fully isolate package ( 2,500 Volt AC/RMS).
  • Very low internal inductance ( ≤ 5 nH typ. ).
  • Industry standard outline C Ultra-FastTM Speed IGBT VCES = 600V G E VCE(on) typ. = 1.60V @VGE = 15V, IC = 100A n-channel Benefits.
  • Designed for increased operating efficie.

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GA200SA60S INSULATED GATE BIPOLAR TRANSISTOR
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PD -50066A GA200SA60U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package ( 2,500 Volt AC/RMS) • Very low internal inductance ( ≤ 5 nH typ.) • Industry standard outline C Ultra-FastTM Speed IGBT VCES = 600V G E VCE(on) typ. = 1.