GA200SA60U Datasheet PDF - International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Specs

GA200SA60U - INSULATED GATE BIPOLAR TRANSISTOR

Datasheet Summary

Features

UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode.
Very low conduction and switching losses.
Fully isolate package ( 2,500 Volt AC/RMS).
Very low internal inductance ( ≤ 5 nH typ. ).
Industry standard outline C Ultra-FastTM Speed IGBT VCES = 600V G E VCE(on) typ. = 1.60V @VGE = 15V, IC = 100A n-channel Benefits.
Designed for increased operating efficie.

Datasheet Details

Part number	GA200SA60U
Manufacturer	International Rectifier
File Size	197.24 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	GA200SA60U Datasheet
Additional preview pages of the GA200SA60U datasheet.

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Full PDF Text Transcription

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PD -50066A GA200SA60U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package ( 2,500 Volt AC/RMS) • Very low internal inductance ( ≤ 5 nH typ.) • Industry standard outline C Ultra-FastTM Speed IGBT VCES = 600V G E VCE(on) typ. = 1.

Published: Mar 23, 2005 |