Datasheet4U Logo Datasheet4U.com

GA200SA60S - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz.
  • Lowest conduction losses available.
  • Fully isolated package ( 2,500 volt AC).
  • Very low internal inductance ( 5 nH typ. ).
  • Industry standard outline C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 100A n-channel Benefits.
  • Designed for increased operating efficiency in power conversion: UPS, SMPS, Welding, Induction heati.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GA200 SILICON CONTROLLED RECTIFIERS Digitron Semiconductors
GA200A SILICON CONTROLLED RECTIFIERS Digitron Semiconductors
GA200HS60S1PBF IGBT Vishay Siliconix
GA200TS60UPBF IGBT Vishay Siliconix
GA201 SILICON CONTROLLED RECTIFIERS Digitron Semiconductors

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
GA200SA60SP INSULATED GATE BIPOLAR TRANSISTOR
GA200SA60U INSULATED GATE BIPOLAR TRANSISTOR
GA200HS60S Standard Speed IGBT
GA200HS60S1 Standard Speed IGBT
GA200NS61U Ultra-Fast Speed IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD- 50070A /) 5)$5 INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standard outline C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.