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International Rectifier Electronic Components Datasheet

GA200SA60U Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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PD -50066A
INSULATED GATE BIPOLAR TRANSISTOR
GA200SA60U
Ultra-FastTM Speed IGBT
Features
UltraFast: Optimized for minimum saturation voltage
and operating frequencies up to 40 kHz in hard
switching, > 200 kHz in resonant mode
Very low conduction and switching losses
Fully isolate package ( 2,500 Volt AC/RMS)
Very low internal inductance ( 5 nH typ.)
Industry standard outline
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.60V
@VGE = 15V, IC = 100A
Benefits
Designed for increased operating efficiency in power
conversion: UPS, SMPS, Welding, Induction heating
Lower overall losses available at frequencies 20kHz
Easy to assemble and parallel
Direct mounting to heatsink
Lower EMI, requires less snubbing
Plug-in compatible with other SOT-227 packages
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load CurrentR
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
S O T -2 2 7
Max.
600
200
100
400
400
± 20
160
2500
500
200
-55 to + 150
-55 to + 150
12 lbf •in(1.3N•m)
Units
V
A
V
mJ
V
W
°C
Thermal Resistance
RθJC
RθCS
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Weight of Module
Typ.
–––
0.05
30
Max.
0.25
–––
–––
Units
°C/W
gm
1
4/24/2000


International Rectifier Electronic Components Datasheet

GA200SA60U Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

GA200SA60U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — —
V(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 — —
DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage 0.38
1.60 1.9
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 10 mA
IC = 100A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance U
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
1.92 V IC = 200A
See Fig.2, 5
1.54
IC = 100A , TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
-11 mV/°C VCE = VGE, IC = 2.0 mA
79 S VCE = 100V, IC = 100A
— — 1.0 mA VGE = 0V, VCE = 600V
— — 10
VGE = 0V, VCE = 600V, TJ = 150°C
— — ±250 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
770 1200
IC = 100A
100 150 nC VCC = 400V
See Fig. 8
260 380
VGE = 15V
54
79 ns TJ = 25°C
130 200
IC = 100A, VCC = 480V
300 450
VGE = 15V, RG = 2.0
0.98
Energy losses include "tail"
3.48 mJ See Fig. 9, 10, 14
4.46 7.6
56
TJ = 150°C,
75
160
ns IC = 100A, VCC = 480V
VGE = 15V, RG = 2.0
460
Energy losses include "tail"
7.24 mJ See Fig. 10, 11, 14
5.0 nH Measured 5mm from package
16500
VGE = 0V
1000 pF VCC = 30V
See Fig. 7
200
ƒ = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
T Pulse width 80µs; duty factor 0.1%.
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 2.0,
(See fig. 13a)
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
2 www.irf.com


Part Number GA200SA60U
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
PDF Download

GA200SA60U Datasheet PDF






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