* Generation 4 IGBT technology
* UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
* Very low conduction and switching losses
* HEXFRED™ antiparallel diodes with ultra- soft recovery
* Industry standard p
GA200TS60U Datasheet (303.56 KB)
GA200TS60U
International Rectifier
303.56 KB
Half-bridge igbt int-a-pak ultra-fast speed igbt.
PD -5.058B PRELIMINARY GA200TS60U Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.8V @VGE = 15V, IC = 200A "HALF-BRIDGE" IGBT INT-A-PAK Featur.
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