GA200TS60U
Features
- Generation 4 IGBT technology
- Ultra Fast: Optimized for high operating frequencies 8-40 k Hz in hard switching, >200 k Hz in resonant mode
- Very low conduction and switching losses
- HEXFRED™ antiparallel diodes with ultra- soft recovery
- Industry standard package
- UL approved
Benefits
- Increased operating efficiency
- Direct mounting to heatsink
- Performance optimized for power conversion: UPS, SMPS, Welding
- Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C I CM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Peak Switching Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range
Max.
600 200 400 400 400 ±20 2500 625 325 -40 to +150 -40 to +125
Units
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