Datasheet4U Logo Datasheet4U.com

GA200TS60UX - Ultra-FastTM Speed IGBT

Key Features

  • Generation 4 IGBT technology.
  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
  • Very low conduction and switching losses.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GA200TS60UPBF IGBT Vishay Siliconix
GA200 SILICON CONTROLLED RECTIFIERS Digitron Semiconductors
GA200A SILICON CONTROLLED RECTIFIERS Digitron Semiconductors
GA200HS60S1PBF IGBT Vishay Siliconix
GA201 SILICON CONTROLLED RECTIFIERS Digitron Semiconductors

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
GA200TS60U HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
GA200TD120U HALF-BRIDGE IGBT DOUBLE INT-A-PAK
GA200HS60S Standard Speed IGBT
GA200HS60S1 Standard Speed IGBT
GA200NS61U Ultra-Fast Speed IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr Bulletin I27221 03/06 GA200TS60UX "HALF-BRIDGE" IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package • UL approved Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.