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GA200TS60UPBF - IGBT

Datasheet Summary

Features

  • Generation 4 IGBT technology.
  • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode.
  • Very low conduction and switching losses.

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Datasheet preview – GA200TS60UPBF

Datasheet Details

Part number GA200TS60UPBF
Manufacturer Vishay Siliconix
File Size 302.93 KB
Description IGBT
Datasheet download datasheet GA200TS60UPBF Datasheet
Additional preview pages of the GA200TS60UPBF datasheet.

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Full PDF Text Transcription

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www.DataSheet.co.kr GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED® antiparallel diodes with ultrasoft recovery • Industry standard package • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC INT-A-PAK • Designed and qualified for industrial level PRODUCT SUMMARY VCES IC DC VCE(on) at 200 A, 25 °C 600 V 265 A 1.
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