GA200TS60U - HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT

Datasheet Summary

Generation 4 IGBT technology.
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
Very low conduction and switching losses.

International Rectifier

Part number	GA200TS60U
Manufacturer	International Rectifier
File Size	303.56 KB
Description	HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
Datasheet	GA200TS60U Datasheet
Additional preview pages of the GA200TS60U datasheet.

GA200TS60UPBF - IGBT (Vishay Siliconix)
GA200 - SILICON CONTROLLED RECTIFIERS (Digitron Semiconductors)
GA200A - SILICON CONTROLLED RECTIFIERS (Digitron Semiconductors)
GA200HS60S1PBF - IGBT (Vishay Siliconix)
GA201 - SILICON CONTROLLED RECTIFIERS (Digitron Semiconductors)
GA201A - SILICON CONTROLLED RECTIFIERS (Digitron Semiconductors)
GA20JT06-CAL - OFF Silicon Carbide Junction Transistor (GeneSiC)
GA20JT12-247 - Normally - OFF Silicon Carbide Junction Transistor (GeneSiC)
GA20JT12-263 - Junction Transistor (GeneSiC)
GA20SICP12-263 - Silicon Carbide Junction Transistor/Schottky Diode (GeneSiC)

Other Datasheets by International Rectifier

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PD -5.058B PRELIMINARY GA200TS60U Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.

Published: Mar 23, 2005 |