GA200TS60U Overview
PD -5.058B PRELIMINARY GA200TS60U Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.8V @VGE = 15V, IC = 200A "HALF-BRIDGE" IGBT INT-A-PAK.
GA200TS60U Key Features
- Generation 4 IGBT technology
- UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
- Very low conduction and switching losses
- HEXFRED™ antiparallel diodes with ultra- soft recovery
- Industry standard package
- UL approved
- Increased operating efficiency
- Direct mounting to heatsink
- Performance optimized for power conversion: UPS, SMPS, Welding
- Lower EMI, requires less snubbing
