GB6B60KD IRGB6B60KD

International Rectifier

GB6B60KD Description

www.DataSheet4U.com PD - 94381E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KD IRGS6B60KD IRGSL6B60KD VCES = 600.

GB6B60KD Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits

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Datasheet Details

Part number: GB6B60KD
Manufacturer: International Rectifier
File Size: 365.51 KB
Datasheet: GB6B60KD_InternationalRectifier.pdf
Description: IRGB6B60KD

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IRGB6B60KD International Rectifier

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