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GIB10B60KD1 IRGIB10B60KD1

GIB10B60KD1 Description

www.DataSheet.co.kr PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

GIB10B60KD1 Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Maximum Junction Temperature R

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IRGIB10B60KD1 International Rectifier
International Rectifier GIB10B60KD1-like datasheet