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International Rectifier Electronic Components Datasheet

GIB10B60KD1 Datasheet

IRGIB10B60KD1

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PD-94576A
IRGIB10B60KD1
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C
Benefits
G
E
n-channel
VCES = 600V
IC = 10A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.7V
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
cICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VISOL
RMS Isolation Voltage, Terminal to Case, t = 1 min
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal / Mechanical Characteristics
Parameter
RθJC Junction-to-Case- IGBT
RθJC Junction-to-Case- Diode
RθCS
Case-to-Sink, flat, greased surface
RθJA Junction-to-Ambient, typical socket mount
Wt Weight
www.irf.com
TO-220
Full-Pak
Max.
600
16
10
32
32
16
10
32
2500
±20
44
22
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf.in (1.1N.m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2.0
Max.
3.4
5.3
–––
62
–––
Units
°C/W
g
1
2/27/04
Datasheet pdf - http://www.DataSheet4U.net/


International Rectifier Electronic Components Datasheet

GIB10B60KD1 Datasheet

IRGIB10B60KD1

No Preview Available !

www.DataSheet.co.kr
IRGIB10B60KD1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
1.50
VCE(on)
Collector-to-Emitter Voltage
VGE(th)
VGE(th)/TJ
gfe
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
3.5
ICES
Zero Gate Voltage Collector Current
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
0.99
1.70
2.05
2.06
4.5
-10
5.0
1.0
90
150
1.80
1.32
1.23
— V VGE = 0V, IC = 500µA
— V/°C VGE = 0V, IC = 1mA (25°C-150°C)
2.10
IC = 10A, VGE = 15V, TJ = 25°C
2.35 V IC = 10A, VGE = 15V, TJ = 150°C
2.35
IC = 10A, VGE = 15V, TJ = 175°C
5.5 V VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 1mA (25°C-150°C)
— S VCE = 50V, IC = 10A, PW = 80µs
150 VGE = 0V, VCE = 600V
250 µA VGE = 0V, VCE = 600V, TJ = 150°C
400 VGE = 0V, VCE = 600V, TJ = 175°C
2.40 V IF = 5.0A, VGE = 0V
1.74
IF = 5.0A, VGE = 0V, TJ = 150°C
1.62
IF = 5.0A, VGE = 0V, TJ = 175°C
±100 nA VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
LE
Cies
Coes
Cres
RBSOA
SCSOA
ISC (PEAK)
Erec
trr
Irr
Qrr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Peak Short Circuit Collector Current
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Diode Reverse Recovery Charge
— 41 62
— 4.6 6.9
— 19 29
— 156 264
— 165 273
— 321 434
— 25 33
— 24 34
— 180 250
— 62 87
— 261 372
— 313 425
— 574 694
— 22 31
— 24 34
— 240 340
— 48 67
— 7.5 —
— 610 915
— 66 99
— 23 35
FULL SQUARE
10 — —
— 100 —
— 99 128
— 79 103
— 14 18
— 553 719
IC = 10A
nC VCC = 400V
VGE = 15V
IC = 10A, VCC = 400V
dµJ VGE = 15V, RG = 50, L = 1.07mH
Ls= 150nH, TJ = 25°C
IC = 10A, VCC = 400V
ns VGE = 15V, RG = 50, L = 1.1mH
Ls= 150nH, TJ = 25°C
IC = 10A, VCC = 400V
dµJ VGE = 15V, RG = 50, L = 1.07mH
Ls= 150nH, TJ = 150°C
IC = 8.0A, VCC = 400V
ns VGE = 15V, RG = 50, L = 1.07mH
Ls= 150nH, TJ = 150°C
nH Measured 5 mm from package
VGE = 0V
pF VCC = 30V
f = 1.0MHz
TJ = 150°C, IC = 32A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG = 50
µs TJ = 150°C, Vp = 600V, RG = 50
VCC=360V,VGE = +15V to 0V
A
µJ TJ = 150°C
ns VCC = 400V, IF = 10A, L = 1.07mH
A VGE = 15V, RG = 50
nC di/dt = 500A/µs
 Vcc =80% (VCES), VGE = 20V, L =100µH, RG = 50Ω.
2
‚ Energy losses include "tail" and diode reverse recovery.
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Datasheet pdf - http://www.DataSheet4U.net/


Part Number GIB10B60KD1
Description IRGIB10B60KD1
Maker International Rectifier
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GIB10B60KD1 Datasheet PDF






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