HFA04TB60 Datasheet | International Rectifier

Features - - - - - Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 1 CATHODE Ultrafast, Soft Recovery Diode BASE CATHODE VR = 600V VF = 1.8V Qrr - = 40n C 3 ANODE 2 Benefits - Reduced RFI and EMI - Reduced Power Loss in Diode and Switching Transistor - Higher Frequency Operation - Reduced Snubbing - Reduced Parts Count di(rec)M/dt - = 280A/µs - 125°C Description International Rectifier's HFA04TB60 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb bination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 8 amps per Leg continuous current, the HFA04TB60 is especially well suited for use as the panion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features bine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, ponent count and heatsink sizes. The HEXFRED HFA04TB60 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-220AC Absolute Maximum Ratings Parameter VR IF @ TC = 100°C IFSM IFRM PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max 600 4.0 25 16 25 10 -55 to +150 Units Bulletin...