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International Rectifier Electronic Components Datasheet

HFA25TB60S Datasheet

Soft Recovery Diode

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Bulletin PD-20616 rev. B 11/03
HEXFREDTM
HFA25TB60S
Ultrafast, Soft Recovery Diode
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Base
Cathode
2
1
N/C
3
Anode
VR = 600V
VF(typ.)* = 1.3V
IF(AV) = 25A
Qrr (typ.)= 112nC
IRRM = 10A
trr(typ.) = 23ns
di(rec)M/dt (typ.) = 250A/µs
Description
International Rectifier's HFA25TB60S is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60S
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA25TB60S is
ideally suited for applications in power supplies and power conversion systems
(such as inverters), motor drives, and many other similar applications where
high speed, high efficiency is needed.
D2 Pak
Absolute Maximum Ratings
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
* 125°C
www.irf.com
Max.
600
25
225
100
125
50
-55 to +150
Units
V
A
W
°C
1


International Rectifier Electronic Components Datasheet

HFA25TB60S Datasheet

Soft Recovery Diode

No Preview Available !

HFA25TB60S
Bulletin PD-20616 rev. B 11/03
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VBR
Cathode Anode Breakdown Voltage
600 ––– ––– V IR = 100µA
VFM Max Forward Voltage
––– 1.3 1.7
––– 1.5 2.0
IF = 25A
V IF = 50A
See Fig. 1
IRM Max Reverse Leakage Current
––– 1.3 1.7
IF = 25A, TJ = 125°C
––– 1.5 20 µA VR = VR Rated
See Fig. 2
––– 600 2000
TJ = 125°C, VR = 0.8 x VR RatedD Rated
CT Junction Capacitance
––– 55 100 pF VR = 200V
See Fig. 3
LS Series Inductance
––– 8.0 –––
nH
Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M/dt1
di(rec)M/dt2
Parameter
Reverse Recovery Time
See Fig. 5
Peak Recovery Current
See Fig. 6
Reverse Recovery Charge
See Fig. 7
Peak Rate of Fall of Recovery Current
During tb
See Fig. 8
Min. Typ. Max. Units
Test Conditions
––– 23 –––
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
––– 50 75 ns TJ = 25°C
––– 105 160
TJ = 125°C
IF = 25A
––– 4.5 10
––– 8.0 15
A
TJ = 25°C
TJ = 125°C
VR = 200V
–––
–––
112 375
420 1200
nC
TJ = 25°C
TJ = 125°C
dif/dt = 200A/µs
–––
–––
250
160
–––
–––
A/µs
TJ = 25°C
TJ = 125°C
Thermal - Mechanical Characteristics
Tlead
RthJC
RthJA
Wt
c
d
Parameter
Lead Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Weight
c 0.063 in. from Case (1.6mm) for 10 sec
d Typical Socket Mount
2
Min.
––––
––––
––––
––––
––––
Typ.
––––
––––
––––
2.0
0.07
Max.
300
1.0
80
––––
––––
Units
°C
K/W
g
(oz)
www.irf.com


Part Number HFA25TB60S
Description Soft Recovery Diode
Maker International Rectifier
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HFA25TB60S Datasheet PDF






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