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International Rectifier Electronic Components Datasheet

HFA35HB60 Datasheet

Soft Recovery Diode

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HEXFREDTM
PD-20379
HFA35HB60
Ultrafast, Soft Recovery Diode
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
• Electrically Isolated
• Ceramic Eyelets
(ISOLATED BASE)
CATHODE
ANODE
VR = 600V
VF = 1.75V
Qrr = 290nC
di(rec)M/dt = 400A/µs
Description
HEXFREDTM diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems.
An extensive characterization of the recovery behavior
for different values of current, temperature and di/dt
simplifies the calculations of losses in the operating
conditions. The softness of the recovery eliminates the
need for a snubber in most applications. These devices
are ideally suited for power converters, motors drives and
other applications where switching losses are significant
portion of the total losses.
TO-254AA
Absolute Maximum Ratings (per Leg)
VR
IF @ TC = 100°C
IFSM @ TC = 25°C
PD @ TC = 25°C
TJ
TSTG
Parameter
D.C. Reverse Voltage
Continuous Forward Current 
Single Pulse Forward Current ‚
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
600
22
225
83
-55 to +150
Units
V
A
W
°C
Thermal - Mechanical Characteristics
RθJC
Parameter
Junction-to-Case, Single Leg Conducting
Weight
Note:  D.C. = 50% rect. wave
‚ 1/2 sine wave, 60 Hz , P.W. = 8.33 ms
www.irf.com
Typ.
9.3
Max.
1.5
Units
°C/W
g
1
6/30/99
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International Rectifier Electronic Components Datasheet

HFA35HB60 Datasheet

Soft Recovery Diode

No Preview Available !

www.DataSheet4U.com
HFA35HB60
Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VBR
Cathode Anode Breakdown Voltage
600 — —
V IR = 100µA
VFM Max Forward Voltage
— — 1.75
IF = 22A
— — 2.25 V IF = 45A
See Fig. 1
— — 1.64
IF = 22A, TJ = 125°C
IRM Max Reverse Leakage Current
— — 10 µA VR = VR Rated
See Fig. 2
— — 1.0 mA TJ = 125°C, VR = 480V
CT Junction Capacitance
LS Series Inductance
— 56 59
— 8.7 —
pF VR = 200V
See Fig. 3
nH Measured from center of bond pad to
end of anode bonding wire
Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M/dt1
di(rec)M/dt2
Parameter
Reverse Recovery Time
Peak Recovery Current
Reverse Recovery Charge
Peak Rate of Fall of Recovery Current
During tb
Min. Typ. Max. Units
Test Conditions
— 60 90
— 110 165
ns TJ = 25°C See Fig.
TJ = 125°C
5
IF = 22A
— 5.2 7.8 A TJ = 25°C See Fig.
— 8.5 13
TJ = 125°C
6
VR = 200V
— 190 290 nC TJ = 25°C See Fig.
— 560 840
TJ = 125°C
7 dif/dt = 200A/µs
— 270 400 A/µs TJ = 25°C See Fig.
— 170 250
TJ = 125°C
8
Case Outline and Dimensions — TO-254AA
3 .7 8 ( .1 49 )
3 .5 3 ( .1 39 )
-A-
13 .84 ( .5 45 )
13 .59 ( .5 35 )
17.40 ( .68 5 )
16.89 ( .66 5 )
31.40 ( 1.235 )
30.39 ( 1.199 )
123
20.32 ( .800 )
20.07 ( .790 )
-C-
6.60 ( .260 )
6.32 ( .249 )
.12 ( .0 05 )
-B -
1 .2 7 ( .0 50 )
1 .0 2 ( .0 40 )
13.84 ( .545 )
13.59 ( .535 )
LEGEND
1 - COLLECTOR W
2 - E M ITT E R
3 - GATE
123
3.81 ( .150 )
2X
3X
1.14 ( .045 )
0.89 ( .035 )
.50 ( .020 ) M C A M B
.25 ( .010 ) M C
NOTES:
1 . D IM E N S IO NIN G & TO L E RA N C IN G P E R A N S I Y 1 4.5M , 1 982 .
2 . A L L D IM E N S IO N S A R E S HO W N IN M IL LIM E TE R S ( IN CH E S ).
3.81 ( .150 )
LEGEND
1- DRAIN
2- SOURCE
3- GATE
Conforms to JEDEC Outline TO-254AA
Dimensions in Millimeters and ( Inches )
LEGEND
1- DRAIN
2- SOURCE
3- GATE
CAUTION
BERYLLIA WARNING PER MIL- PRF-19500
Package containing beryllia shall not be ground, sandblasted,machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, eryllium oxide packages shall not be placed in acids that will
produce fumes containing beryllium.
2
www.irf.com
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Part Number HFA35HB60
Description Soft Recovery Diode
Maker International Rectifier
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HFA35HB60 Datasheet PDF






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