HFB08PB120
Features
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- Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions
1 CATHODE
BASE CATHODE
VR = 1200V VF (typ.)- = 2.4V IF (AV) = 8.0A Qrr (typ.)= 140n C IRRM (typ.) = 4.5A
3 ANODE 2
2 trr (typ.) = 28ns di(rec) M /dt (typ.)- = 85A /µs
Benefits
- Reduced RFI and EMI
- Reduced Power Loss in Diode and Switching Transistor
- Higher Frequency Operation
- Reduced Snubbing
- Reduced Parts Count
TO-247AC (Modified)
Description
International Rectifier's HFA08PB120 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb bination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 8 amps continuous current, the HFA08PB120 is especially well suited for use as the panion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED...
