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International Rectifier Electronic Components Datasheet

HFB12PA120C Datasheet

Soft Recovery Diode

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HEXFREDTM
PD -2.362 rev. C 01/2000
HFA12PA120C
Ultrafast, Soft Recovery Diode
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Guaranteed Avalanche
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description
International Rectifier's HFA12PA120C is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of characteristics which
results in performance which is unsurpassed by any rectifier previously available. The
HFA12PA120C has basic ratings of 1200 volts and 6 amps per leg continuous current.
In addition to ultra fast recovery time, the HEXFRED product line features extremely
low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-
off" during the tb portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower switching losses in both
the diode and the switching transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and heatsink sizes. The HEXFRED
HFA12PA120C is ideally suited for applications in power supplies and power
conversion systems (such as inverters, converters, UPS systems, and power factor
correction circuits), motor drives, and many other similar applications where high
speed, high efficiency is needed.
VR = 1200V
VF(typ.)* = 2.4V
IF(AV) = 6A
Qrr (typ.)= 116nC
IRRM(typ.) = 4.4A
trr(typ.) = 26ns
di(rec)M/dt (typ.)* = 100A/µs
TO-247AC
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
* 125°C
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
6.0
80
24
62.5
25
-55 to +150
Units
V
A
W
°C
1


International Rectifier Electronic Components Datasheet

HFB12PA120C Datasheet

Soft Recovery Diode

No Preview Available !

HFA12PA120C
PD-2.362 rev. C 01/2000
www.DataSheet4U.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VBR Cathode Anode Breakdown 1200 ––– ––– V IR = 100µA
Voltage
VFM Max. Forward Voltage
––– 2.7 3.0
IF = 6.0A
––– 3.5 3.9 V IF = 12A
––– 2.4 2.8
IF = 6.0A, TJ = 125°C
IRM Max. Reverse Leakage Current ––– 0.26 5.0
VR = VR Rated
µA
––– 110 500
TJ = 125°C, VR = 0.8 x VR RatedD R
CT Junction Capacitance
––– 9.0 14 pF VR = 200V Rated
LS Series Inductance
––– 8.0 ––– nH Measured lead to lead 5mm from pkg body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
trr Reverse Recovery Time
trr1
trr2
IRRM1
Peak Recovery Current
IRRM2
Qrr1 Reverse Recovery Charge
Qrr2
di(rec)M/dt1 Peak Rate of Recovery
di(rec)M/dt2 Current During tb
––– 26 –––
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
––– 53 80 ns TJ = 25°C
––– 87 130
TJ = 125°C
IF = 6.0A
––– 4.4 8.0 A TJ = 25°C
––– 5.0 9.0
TJ = 125°C
VR = 200V
––– 116 320
TJ = 25°C
nC
––– 233 585
TJ = 125°C
dif/dt = 200A/µs
––– 180 –––
TJ = 25°C
A/µs
––– 100 –––
TJ = 125°C
Thermal - Mechanical Characteristics
Parameter
Tlead Q
Lead Temperature
RthJC
Thermal Resistance, Junction to Case
RthJA R
Thermal Resistance, Junction to Ambient
RthCS S
Thermal Resistance, Case to Heat Sink
Wt Weight
Mounting Torque
Q 0.063 in. from Case (1.6mm) for 10 sec
R Typical Socket Mount
S Mounting Surface, Flat, Smooth and Greased
Min.
––––
––––
––––
––––
––––
––––
6.0
5.0
Typ.
––––
––––
––––
0.5
2.0
0.07
––––
––––
Max.
300
2.0
80
––––
––––
––––
12
10
Units
°C
K/W
g
(oz)
Kg-cm
lbf•in
2


Part Number HFB12PA120C
Description Soft Recovery Diode
Maker International Rectifier
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HFB12PA120C Datasheet PDF






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