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International Rectifier Electronic Components Datasheet

IFR830A Datasheet

MOSFET

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SMPS MOSFET
PD- 91878D
IRF830A
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
HEXFET® Power MOSFET
VDSS
500V
Rds(on) max ID
1.40
5.0A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss specified ( See AN 1001)
TO-220AB G D S
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
5.0
3.2
20
74
0.59
± 30
5.3
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies:
l Two transistor Forward
l Half Bridge and Full Bridge
Notes  through … are on page 8
www.irf.com
1
3/20/03


International Rectifier Electronic Components Datasheet

IFR830A Datasheet

MOSFET

No Preview Available !

www.DataSheet4U.com
IRF830A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
Min. Typ.
500 –––
––– 0.60
––– –––
2.0 –––
––– –––
––– –––
––– –––
––– –––
Max.
–––
–––
1.4
4.5
25
250
100
-100
Units
V
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 3.0A „
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs Forward Transconductance
2.8 ––– –––
Qg Total Gate Charge
––– ––– 24
Qgs Gate-to-Source Charge
––– ––– 6.3
Qgd Gate-to-Drain ("Miller") Charge
––– ––– 11
td(on)
Turn-On Delay Time
––– 10 –––
tr Rise Time
––– 21 –––
td(off)
Turn-Off Delay Time
––– 21 –––
tf Fall Time
––– 15 –––
Ciss Input Capacitance
––– 620 –––
Coss Output Capacitance
––– 93 –––
Crss Reverse Transfer Capacitance
––– 4.3 –––
Coss Output Capacitance
––– 886 –––
Coss Output Capacitance
––– 27 –––
Coss eff. Effective Output Capacitance
Avalanche Characteristics
––– 39 –––
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 3.0A
ID = 5.0A
VDS = 400V
VGS = 10V, See Fig. 6 and 13 „
VDD = 250V
ID = 5.0A
RG = 14
RD = 49,See Fig. 10
„
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V …
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
230
5.0
7.4
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
RθCS
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
––– 1.7
0.50 ––– °C/W
RθJA
Junction-to-Ambient
––– 62
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
––– ––– 5.0
––– ––– 20
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
VSD Diode Forward Voltage
––– ––– 1.5 V TJ = 25°C, IS = 5.0A, VGS = 0V „
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
––– 430 650 ns TJ = 25°C, IF = 5.0A
––– 1.62 2.4 µC di/dt = 100A/µs „
ton Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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Part Number IFR830A
Description MOSFET
Maker International Rectifier
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