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International Rectifier Electronic Components Datasheet

IPS022G Datasheet

DUAL FULLY PROTECTED POWER MOSFET SWITCH

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Data Sheet No.PD60203
IPS022G
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
Description
The IPS022G are fully protected dual low side SMART
POWER MOSFETs respectively. They feature over-
current, over-temperature, ESD protection and drain
to source active clamp.These devices combine a
HEXFET® POWER MOSFET and a gate driver. They
offer full protection and high reliability required in
harsh environments. The driver allows short switch-
ing times and provides efficient protection by turning
OFF the power MOSFET when the temperature ex-
ceeds 165oC or when the drain current reaches 5A.
These devices restart once the input is cycled. The
avalanche capability is significantly enhanced by
the active clamp and covers most inductive load
demagnetizations.
Product Summary
Rds(on)
V clamp
Ishutdown
Ton/Toff
150m(max)
50V
5A
1.5µs
Package
8-Lead SOIC
IPS022G
(Dual)
Typical Connection
Load
R in series
(if needed)
IN
Q
Logic signal
control S
(Refer to lead assignment for correct pin configuration)
www.irf.com
D
S
1


International Rectifier Electronic Components Datasheet

IPS022G Datasheet

DUAL FULLY PROTECTED POWER MOSFET SWITCH

No Preview Available !

IPS022G
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard foot-
print with 70 µm copper thickness.
Symbol Parameter
Min.
Vds
Vin
Iin, max
Isd cont.
Maximum drain to source voltage
Maximum input voltage
Maximum IN current
Diode max. continuous current (1)
(lsd mosfets, rth=125oC/W)
-0.3
-10
Isd pulsed Diode max. pulsed current (1) (for ea. mosfet)
Pd Maximum power dissipation(1)
(Pd mosfets, rth=125oC/W)
ESD1 Electrostatic discharge voltage (Human Body)
ESD2 Electrostatic discharge voltage (Machine Model)
T stor. Max. storage temperature
Tj max. Max. junction temperature
-55
-40
Max.
47
7
+10
Units
V
mA
Test Conditions
1.4 A
10
1W
4 C=100pF, R=1500Ω,
0.5 kV C=200pF, R=0Ω, L=10µH
150
+150
oC
Thermal Characteristics
Symbol Parameter
Rth1
Thermal resistance with standard footprint
(2 mos on) (2 mosfets on)
Rth2
Thermal resistance with standard footprint
(1 mos on) (1 mosfet on)
Rth3
Thermal resistance with 1" square footprint
(2 mos on) (2 mosfets on)
Min. Typ. Max. Units Test Conditions
— 100 —
oC/W
— 127 —
— 60 —
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
2 www.irf.com


Part Number IPS022G
Description DUAL FULLY PROTECTED POWER MOSFET SWITCH
Maker International Rectifier
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IPS022G Datasheet PDF






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International Rectifier





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