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IPS021 - FULLY PROTECTED POWER MOSFET SWITCH

General Description

The IPS021/IPS021S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver.

Key Features

  • Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E. S. D protection Product Summary Rds(on) V clamp Ishutdown Ton/Toff Packages 150mΩ (max) 50V 5A 1.5µs.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IPS021L FULLY PROTECTED POWER MOSFET SWITCH
IPS021S FULLY PROTECTED POWER MOSFET SWITCH
IPS022G DUAL FULLY PROTECTED POWER MOSFET SWITCH
IPS024G QUAD FULLY PROTECTED POWER MOSFET SWITCH
IPS0151 FULLY PROTECTED POWER MOSFET SWITCH

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet No.PD 60148-K IPS021(S) FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary Rds(on) V clamp Ishutdown Ton/Toff Packages 150mΩ (max) 50V 5A 1.5µs Description The IPS021/IPS021S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 5A.