IPS022G - DUAL FULLY PROTECTED POWER MOSFET SWITCH

Product Overview

International Rectifier

Datasheet Details

Part number	IPS022G
Manufacturer	International Rectifier
File Size	95.32 KB
Description	DUAL FULLY PROTECTED POWER MOSFET SWITCH
Datasheet	IPS022G Datasheet
Additional preview pages of the IPS022G datasheet.

Product details

Description

The IPS022G are fully protected dual low side SMART POWER MOSFETs respectively.

They feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver.

Features

Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E. S. D protection Product Summary Rds(on) V clamp Ishutdown Ton/Toff Package 150mΩ (max) 50V 5A 1.5µs.

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Other Datasheets by International Rectifier

IPS021 - FULLY PROTECTED POWER MOSFET SWITCH
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IPS024G - QUAD FULLY PROTECTED POWER MOSFET SWITCH
IPS0151 - FULLY PROTECTED POWER MOSFET SWITCH
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Published: Apr 16, 2005 |