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IPS022G - DUAL FULLY PROTECTED POWER MOSFET SWITCH

General Description

The IPS022G are fully protected dual low side SMART POWER MOSFETs respectively.

They feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver.

Key Features

  • Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E. S. D protection Product Summary Rds(on) V clamp Ishutdown Ton/Toff Package 150mΩ (max) 50V 5A 1.5µs.

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Other Datasheets by International Rectifier (now Infineon)

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IPS021 FULLY PROTECTED POWER MOSFET SWITCH
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet No.PD60203 IPS022G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary Rds(on) V clamp Ishutdown Ton/Toff Package 150mΩ (max) 50V 5A 1.5µs Description The IPS022G are fully protected dual low side SMART POWER MOSFETs respectively. They feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 5A.