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International Rectifier Electronic Components Datasheet

IPS0551T Datasheet

FULLY PROTECTED POWER MOSFET SWITCH

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Data Sheet No. PD60160-A
IPS0551T
FULLY PROTECTED POWER MOSFET SWITCH
Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
Description
The IPS0551T is a fully protected three terminal SMART
POWER MOSFET that features over-current, over-tem-
perature, ESD protection, and drain to source active
clamp. This device combines a HEXFET® POWER
MOSFET and a gate driver. It offers full protection and
high reliability required in harsh environments. The driver
allows short switching times and provides efficient protec-
tion by turning OFF the power MOSFET when temperature
exceeds 165oC or when the drain current reaches 100A.
The device restarts once the input is cycled. The ava-
lanche capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
Product Summary
Rds(on)
V clamp
Ishutdown
Ton/Toff
5.2m(max)
40V
100A
4µs
Package
SUPER TO220
SUPER SMD220
Advance Information
Typical Connection
Load
R in s e r ie s
( if n e e d e d )
IN
L o g ic s ig n a l
contro l
D
S
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1


International Rectifier Electronic Components Datasheet

IPS0551T Datasheet

FULLY PROTECTED POWER MOSFET SWITCH

No Preview Available !

IPS0551T
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard foot-
print with 70 µm copper thickness.
Symbol Parameter
Min.
Vds
Vin
I+in
Isd cont.
Maximum drain to source voltage
Maximum input voltage
Maximum IN current
Diode max. continuous current (1)
(rth=60oC/W)
-0.3
-10
(rth=5oC/W)
Isd pulsed Diode max. pulsed current (1)
Pd Maximum power dissipation(1)
(rth=60oC/W)
ESD1 Electrostatic discharge voltage (Human Body)
ESD2 Electrostatic discharge voltage (Machine Model)
Tj max. Max. storage & operating junction temp.
-40
Tlead
Lead temperature (soldering, 10 seconds)
Max.
37
7
+10
Units
V
mA
Test Conditions
2.8
35 A
100
2
4
0.5
+150
300
W
C=100pF, R=1500Ω,
kV
C=200pF, R=0Ω, L=10µH
oC
Thermal Characteristics
Symbol Parameter
Rth 1
Rth 2
Rth 3
Rth 4
Thermal resistance free air
Thermal resistance to PCB min footprint
Thermal resistance to PCB 1" sq. footprint
Thermal resistance junction to case
Min.
Typ.
60
60
35
0.7
Max. Units Test Conditions
oC/W
a
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min. Max. Units
Vds (max) Continuous drain to source voltage
VIH High level input voltage
VIL Low level input voltage
Ids Continuous drain current
Tamb=85oC
(TAmbient = 85oC, IN = 5V, rth = 80oC/W, Tj = 125oC)
(TAmbient = 85oC, IN = 5V, rth = 5oC/W, Tj = 125oC)
Rin Recommended resistor in series with IN pin
Tr-in (max) Max recommended rise time for IN signal (see fig. 2)
Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V)
— 18
46
0 0.5
—8
— 35
0.1 0.5
—1
01
V
A
k
µS
kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. Notes.
2
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Part Number IPS0551T
Description FULLY PROTECTED POWER MOSFET SWITCH
Maker International Rectifier
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IPS0551T Datasheet PDF






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