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IR01H420 - (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE

Description

The IR01H(D)xxx is a high voltage, high speed half bridge.

Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET power MOSFET technology, enable ruggedized single package construction.

The logic inputs are compatible with standard CMOS or LSTTL outputs.

Features

  • Output Power MOSFETs in half-bridge configuration.
  • 500V rated breakdown voltage.
  • High side gate drive designed for bootstrap.
  • operation Matched propagation delay for both channels Undervoltage lockout 5V Schmitt-triggered input logic Half-Bridge output in phase with HIN Heatsink version (P2) with improved PD Product Summary VIN (max) ton/off trr 250V- 214/224 500V - 420 RDS(on).

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Datasheet Details

Part number IR01H420
Manufacturer International Rectifier
File Size 82.77 KB
Description (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE
Datasheet download datasheet IR01H420 Datasheet
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Full PDF Text Transcription

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Data Sheet No. PD-6.075-G IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 HIGH VOLTAGE HALF BRIDGE Features • Output Power MOSFETs in half-bridge configuration • 500V rated breakdown voltage • High side gate drive designed for bootstrap • • • • • operation Matched propagation delay for both channels Undervoltage lockout 5V Schmitt-triggered input logic Half-Bridge output in phase with HIN Heatsink version (P2) with improved PD Product Summary VIN (max) ton/off trr 250V- 214/224 500V - 420 RDS(on) Description The IR01H(D)xxx is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET power MOSFET technology, enable ruggedized single package construction.
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