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International Rectifier Electronic Components Datasheet

IR2213 Datasheet

HIGH AND LOW SIDE DRIVER

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Preliminary Data Sheet No. PD60030 rev.O
IR2213(S) & (PbF)
HIGH AND LOW SIDE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +1200V
www.DataSheet4U.com Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 12 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Also available LEAD-FREE (PbF)
Product Summary
VOFFSET
1200V max.
IO+/-
1.7A / 2A
VOUT
12 - 20V
ton/off (typ.) 280 & 225 ns
Delay Matching
30 ns
Packages
Description
The IR2213(S) is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable
16-Lead SOIC
ruggedized monolithic construction. Logic inputs are
compatible with standard CMOS or LSTTL outputs,
14-Lead PDIP
(wide body)
down to 3.3V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched
to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration which operates up to 1200 volts.
Typical Connection
up to 1200V
HO
VDD
VDD
VB
HIN HIN VS
SD SD
LIN LIN VCC
VSS VSS COM
VCC LO
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
TO
LOAD
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1


International Rectifier Electronic Components Datasheet

IR2213 Datasheet

HIGH AND LOW SIDE DRIVER

No Preview Available !

IR2213(S) & (PbF)
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
Symbol
Definition
Min.
Max. Units
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VB
VS
VHO
VCC
VLO
VDD
VSS
VIN
dVs/dt
PD
RTHJA
TJ
TS
TL
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
Allowable Offset Supply Voltage Transient (Figure 2)
Package Power Dissipation @ TA +25°C (14 Lead PDIP)
(16 Lead SOIC)
Thermal Resistance, Junction to Ambient (14 Lead PDIP)
(16 Lead SOIC)
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
-0.3
VB - 25
VS - 0.3
-0.3
-0.3
-0.3
VCC - 25
VSS - 0.3
-55
1225
VB + 0.3
VB + 0.3
25
VCC + 0.3
VSS + 25
VCC + 0.3
VDD + 0.3
50
1.6
1.25
75
100
125
150
300
V
V/ns
W
°C/W
°C
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15V differential.
Symbol
Definition
Min.
Max. Units
VB
VS
VHO
VCC
VLO
VDD
VSS
VIN
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
VS + 12
Note 1
VS
12
0
VSS + 3
-5 (Note 2)
VSS
VS + 20
1200
VB
20
VCC
VSS + 20
5
VDD
V
Note 1: Logic operational for VS of -5 to +1200V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip
DT97-3 for more details).
Note 2: When VDD<5V, the minimum VSS offset is limited to -VDD
2 www.irf.com


Part Number IR2213
Description HIGH AND LOW SIDE DRIVER
Maker International Rectifier
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IR2213 Datasheet PDF






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