IR2213 Datasheet | International Rectifier

Features - Floating channel designed for bootstrap operation - Fully operational to +1200 V - Tolerant to negative transient voltage - d V/dt immune - Gate drive supply range from 12 V to 20 V - Undervoltage lockout for both channels - 3.3 V logic patible - Separate logic supply range from 3.3 V to 20 V - Logic and power ground ±5 V offset - CMOS Schmitt-triggered inputs with pull-down - Cycle by cycle edge-triggered shutdown logic - Matched propagation delay for both channels - Outputs in phase with inputs IR2213(S)PBF High and Low Side Driver Product Summary VOFFSET (max) IO+/VOUT ton/off (typical) Delay Matching 1200 V 1.7 A / 2 A 12 V - 20 V 280 ns / 225 ns 30 ns Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are patible with standard CMOS or LSTTL outputs, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 1200 V. Package Options 16 Lead SOIC (Wide Body) 14 Lead PDIP Ordering Information Base Part Number IR2213SPBF IR2213SPBF IR2213PBF Package...