IR25606SPBF Datasheet | International Rectifier

Features Half-Bridge Driver Product Summary - Floating channel designed for bootstrap operation - Fully operational to +600V - Tolerant to negative transient voltage - d V/dt immune - Gate drive supply range from 10 to 20V - Undervoltage lockout for both channels - 3.3V, 5V and 15V input logic patible - Cross-conduction prevention logic - Matched propagation delay for both channels - Outputs in phase with inputs - Logic and power ground +/-5V offset - Internal 540ns dead-time - Lower di/dt gate driver for better noise immunity VOFFSET IO+/VOUT Ton/off (typ.) Dead time (typ.) 600V max. 200 m A / 350 m A - 20V 220 & 200 ns 540 ns Description The IR25606 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is patible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V. Package Options 8 Lead SOIC Ordering Information Base Part Number IR25606SPBF IR25606SPBF Package Type SO8N SO8N Standard Pack Form Quantity Tube Tape and Reel Orderable Part Number IR25606SPBF IR25606STRPBF 1 .irf. © 2013 International...