IR51H737 half-bridge equivalent, self-oscillating half-bridge.
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Product Summary
VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 300V 50% 1.2µs 0.75Ω 2.0W
Output Power MOSFETs in half-bridge configuration 300V Rate.
The device can operate up to 300 volts.
Package
IR51H737 9506
Typical Connection
U P V IN T O 3 0 0 V D C B U S
IR .
The IR51H737 is a high voltage, high speed, selfoscillating half-bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The front-end features a prog.
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