Data Sheet 6.125-G
INTELLIGENT HIGH SIDE MOSFET POWER SWITCH
• PWM Current Limit for Short Circuit Protection
• Over-Temperature Protection
• Active Output Negative Clamp
• Reverse Battery Protection for Logic Circuit
• Broken Ground Protection
• Short to VCC Protection
• Low Noise Charge Pump
• Sleep Mode Supply Current
• 4kV ESD Protection On All Pins
• Logic Ground Isolated From Power Ground
The IR6320G is a monolithic HIGH SIDE SWITCH with built
in short circuit, over- temperature, ESD, inductive load turn
off capability and diagnostic feedback.
The on-chip protection circuit goes into PWM mode, limiting
the average current during short circuit if the drain current
exceeds 10A. The protection circuit latches off the high side
switch if the junction temperature exceeds 170°C and
latches on after the junction temperature falls by 10°C. The
Vcc (drain) to OUT (source) voltage is actively clamped at 55V,
improving its performance during turn off with inductive loads.
The on-chip charge pump high side driver stage is floating
and referenced to the source of the power MOSFET. Thus
the logic to power ground isolation can be as high as 50V.
This allows operation with larger offset as well as controlling
the switch during load energy recirculation or regeneration.
A diagnostic pin is provided for status feedback of short
circuit, over temperature and open load detection.
• Solenoid Driver
• Programmable Logic Controller
Shorted Output H Current-Limiting L