IRF1404PbF - HEXFET Power MOSFET

International Rectifier

IRF1404PbF Datasheet Preview — Preview of IRF1404PbF PDF

Datasheet Details

Part number	IRF1404PbF
Manufacturer	International Rectifier ↗
File Size	210.30 KB
Description	HEXFET Power MOSFET
Datasheet	IRF1404PbF-InternationalRectifier.pdf

IRF1404PbF Product details

Description

Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. 17.

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Published: Feb 8, 2015 |