Datasheet4U Logo Datasheet4U.com

IRF1404ZL - Power MOSFET

Download the IRF1404ZL datasheet PDF (IRF1404Z included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF1404Z-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

  • IRF1404Z - N-Channel MOSFET (INCHANGE)
  • IRF1404ZS - N-Channel MOSFET (INCHANGE)
  • IRF1404 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF1404S - N-Channel MOSFET (INCHANGE)
  • IRF140 - N-Channel Power MOSFETs (Harris)
  • IRF140 - N-Channel Power MOSFET (Seme LAB)
  • IRF140 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF140 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF140 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF1405 - N-Channel MOSFET (INCHANGE)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 94634B Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Published: |