l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET.

Absolute Maximum Ratings G TO-220AB IRF1404Z Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Li.

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.

IRF1404Z

IRF1404ZGPBF

IRF1404ZL

IRF1404ZLPBF

IRF1404ZPBF

IRF1404ZSPBF

IRF1404

IRF1404L

IRF1404LPbF

IRF1404PbF

IRF1404S

IRF1404SPbF

IRF140