IRF1407S mosfet equivalent, power mosfet.
t1/ t
2 J = P DM x Z thJC
P DM t1 t2 +T C 1
0.1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest powe.
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFE.
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