IRF1407S Datasheet - International Rectifier

Power MOSFET

IRF1407S Features

* Fig 15. Typical Avalanche Current Vs.Pulsewidth 400 EAR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 10% Duty Cycle ID = 78A 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005

IRF1407S General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the d.

IRF1407S Datasheet (159.79 KB)

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IRF1407S

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International Rectifier

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159.79 KB

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Power mosfet.
PD -94335 Benefits q q q q q q IRF1407S IRF1407L HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 17.

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IRF1407S Power MOSFET International Rectifier

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IRF1407S Features

IRF1407S General Description

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