IRF1407SPbF Datasheet - International Rectifier

Power MOSFETs

IRF1407SPbF Features

* 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 Fig 15. Typical Avalanche Current Vs.Pulsewidth 1.0E-01 EAR , Avalanche Energy (mJ) 400 300 200 100 0 25 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 78A 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Notes on Repetitive Ava

IRF1407SPbF General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.

IRF1407SPbF Datasheet (246.29 KB)

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IRF1407SPbF

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International Rectifier

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Power mosfets.
PD -95486 IRF1407SPbF Benefits O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C Operating Temperature O Fa.

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IRF1407SPbF Power MOSFETs International Rectifier

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IRF1407SPbF Features

IRF1407SPbF General Description

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