of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this.

q q q IRF1607 HEXFET® Power MOSFET D 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated.

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET .

IRF1607PBF

IRF100

IRF100B201

IRF100B202

IRF100P218

IRF100S201

IRF101

IRF1010

IRF1010E

IRF1010EL

IRF1010ELPbF

IRF1010EPBF

IRF1010ES