IRF1704
IRF1704 is Power MOSFET manufactured by International Rectifier.
Description
Specifically designed for Automotive applications, this HEXFET® power
MOSFET has a 200°C max operating temperature with a Stripe Planar design that utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET® power
MOSFET are fast switching speed and improved repetitive avalanche rating.
The continuing technology leadership of Internationl Rectifier provides 200°C operating temperature in a plastic package. At high ambient temperatures, the IRF1704 can carry up to 20% more current than similar 175 °C Tj max devices in the same package outline. This makes this part ideal for existing and emerging under-the-hood automotive applications such as Electric Power Steering (EPS), Fuel / Water Pump Control and wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor
170 120 680 230 1.3
W W/°C
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
- ± 20 670 100 23 1.9
V m J A m J V/ns
TJ TSTG TLEAD
Operating Junction and Storage Temperature Range Lead Temperature Soldering Temperature, for 10 seconds
-55 to + 200
°C 175
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf- in (1.1N- m)
Thermal Resistance
RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
- -
- 0.50
- -
- Max. 0.75
- -
- 62
Units...
