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IRF1902PBF Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

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General Description

S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipation ƒ Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max.

20 4.2 3.4 17 2.5 1.6 0.02 ± 12 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient ƒ Typ.

––– ––– Max.

Overview

PD - 95496 IRF1902PbF HEXFET® Power MOSFET l l l www.DataSheet4U.com l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS 20V RDS(on) max (mW) 85@VGS = 4.5V 170@VGS = 2.7V ID 4.0A 3.2A These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications..

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

Key Features

  • as been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD.

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