Datasheet Details
| Part number | IRF1902 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 107.28 KB |
| Description | Power MOSFET |
| Download | IRF1902 Download (PDF) |
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| Part number | IRF1902 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 107.28 KB |
| Description | Power MOSFET |
| Download | IRF1902 Download (PDF) |
|
|
|
S S S G 1 8 A A D D D D 2 7 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max.
20 4.2 3.4 17 2.5 1.6 0.02 ± 12 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ.
––– ––– Max.
PD - 94282A IRF1902 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel VDSS 20V RDS(on) max (mΩ) 85@VGS = 4.5V 170@VGS = 2.7V ID 4.0A 3.2A These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications..
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
| Part Number | Description |
|---|---|
| IRF1902PBF | HEXFET Power MOSFET |
| IRF1902UPBF | HEXFET Power MOSFET |
| IRF19520G | HEXFET Power MOSFET |
| IRF100B201 | Power MOSFET |
| IRF100B202 | Power MOSFET |
| IRF100S201 | Power MOSFET |
| IRF1010E | Power MOSFET |
| IRF1010EL | Power MOSFET |
| IRF1010ELPbF | HEXFET Power MOSFET |
| IRF1010EPBF | Power MOSFET |