IRF1902PBF datasheet by International Rectifier (now Infineon).
| Part number | IRF1902PBF |
|---|---|
| Datasheet | IRF1902PBF_InternationalRectifier.pdf |
| File Size | 170.46 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | HEXFET Power MOSFET |
|
|
20 4.2 3.4 17 2.5 1.6 0.02 ± 12 -55 to + 150 Units V A W mW/°C V °C Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. 1 8/10/04 IRF1902PbF @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage...
View all International Rectifier (now Infineon) datasheets
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| IRF100S201 | Power MOSFET |
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| IRF1010EL | Power MOSFET |
| IRF1010ELPbF | HEXFET Power MOSFET |
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