| Part | IRF2204PBF |
|---|---|
| Description | Power MOSFET |
| Category | MOSFET |
| Manufacturer | International Rectifier |
| Size | 281.48 KB |
This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF2204 | Inchange Semiconductor | N-Channel MOSFET |
| IRF220 | Inchange Semiconductor | N-Channel MOSFET Transistor |
| IRF220 | Samsung Semiconductor | N-Channel Power MOSFET |
| IRF220 | Harris | N-Channel Power MOSFETs |
