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International Rectifier Electronic Components Datasheet

IRF2807SPbF Datasheet

HEXFET Power MOSFET

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IRF2807SPbF pdf
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l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF2807L) is available for low-
profile applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
G
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)**
www.irf.com
PD - 95945
IRF2807SPbF
IRF2807LPbF
HEXFET® Power MOSFET
D VDSS = 75V
RDS(on) = 13m
ID = 82A‡
S
D2Pak
TO-262
IRF2807SPbF IRF2807LPbF
Max.
82‡
58
280
230
1.5
± 20
43
23
5.9
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
1
1/4/05


International Rectifier Electronic Components Datasheet

IRF2807SPbF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRF2807SPbF pdf
IRF2807S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
EAS
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy‚
Min. Typ. Max. Units
75 ––– ––– V
––– 0.074 ––– V/°C
––– ––– 13 m
2.0 ––– 4.0 V
38 ––– ––– S
––– ––– 25
––– ––– 250
µA
–––
–––
––– 100
––– -100
nA
––– ––– 160
––– ––– 29 nC
––– ––– 55
––– 13 –––
–––
–––
64 –––
49 –––
ns
––– 48 –––
––– 4.5 –––
––– 7.5 –––
nH
––– 3820 –––
––– 610 –––
––– 130 –––
––– 1280…340†
pF
mJ
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 43A „
VDS = VGS, ID = 250µA
VDS = 50V, ID = 43A„
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 43A
VDS = 60V
VGS = 10V, See Fig. 6 and 13
VDD = 38V
ID = 43A
RG = 2.5
VGS = 10V, See Fig. 10 „
Between lead,
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
IAS = 50A, L = 370µH
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 82‡
––– ––– 280
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.2
––– 100 150
V TJ = 25°C, IS = 43A, VGS = 0V „
ns TJ = 25°C, IF = 43A
––– 410 610 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting TJ = 25°C, L = 370µH
RG = 25, IAS = 43A, VGS=10V (See Figure 12)
ƒ ISD 43A, di/dt 300A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 400µs; duty cycle 2%.
2
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
www.irf.com


Part Number IRF2807SPbF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 10 Pages
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